TY - JOUR
AU - Chao, Tan Fu Lei
AB - Shallow-trench isolation processes which involve refilling using deposition of    oxide and polysilicon were investigated. Our results show that the oxide-filled shallow-trench    isolation technology based on chemical-mechanical polishing (CMP) is difficult    to control and results in poor uniformity. Use of this technology also involves in the    dishing effect in wide field regions. However, shallow-trench isolation technology using    a masking nitride layer, polysilicon refill, the CMP process with high etch selectivity,    and local oxidation of polysilicon is easily implemented and absolutely field oxide    encroachment (bird's beak) free. Although the CMP process results in the dishing effect    in wide field regions, the local oxidation of polysilicon can reduce the amount of dishing.    The polysilicon-filled shallow-trench isolation process can also achieve excellent    uniformity across 6-inch diameter silicon wafers due to the high etching selectivity of    polysilicon to chemical-vapor-deposited (CVD) oxide and SiN. Moreover, the  n+/p    junction leakage current of polysilicon-filled shallow trenches is comparable to that of    oxide-filled shallow trenches. This simple and easily controllable process is a very    promising candidate for shallow trench isolation. 
TI - A Novel Shallow Trench Isolation Technique
JF - Japanese Journal of Applied Physics
DO - 10.1143/JJAP.36.1319
DA - 1997-03-01
UR - https://www.deepdyve.com/lp/iop-publishing/a-novel-shallow-trench-isolation-technique-H9oPAtDwfv
SP - 1319
VL - 36
IS - 3S
DP - DeepDyve
ER -