TY - JOUR
AU1 - Saito, Hisashi
AU2 - Miyamoto, Yasuyuki
AB - In this paper, the reduction in the output conductance (go) of a vertical InGaAs channel metal–insulator–semiconductor field-effect transistor (MISFET) is reported. While vertical InGaAs channel MISFETs exhibit a high drain current density, their large go is a disadvantage. Monte Carlo simulation suggests that the large go might be caused by conduction band bending due to many space charges between the gate and drain. To prevent conduction band bending, a device in which the gate electrode overlaps with the drain region was proposed and fabricated. Consequently, go was decreased from 3.2 to 1 S/mm. 
TI - Reduction of Output Conductance in Vertical InGaAs Channel Metal–Insulator–Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region
JF - Applied Physics Express
DO - 10.1143/APEX.5.024101
DA - 2012-02-01
UR - https://www.deepdyve.com/lp/iop-publishing/reduction-of-output-conductance-in-vertical-ingaas-channel-metal-GwcG34X8dA
SP - 024101
VL - 5
IS - 2
DP - DeepDyve
ER -