TY - JOUR
AU - Mih, Rebecca D.
AB - Low dielectric constant materials in the back-end-of-line process are needed to reduce resistive-capacitive delays due to continually shrinking interconnect dimensions. Several organic dielectrics which have etch rates similar to photoresists, such as benzocyclobutene and diamond-like carbon, have been explored for compatibility with lithographic processes. In this paper we discuss integration issues from a lithographic perspective, including low-k materials selection and properties, integration sequences, use of hard masks and the effects on reflectivity, resist process compatibility and focus effects using an advanced DUV scanning system.
TI - Lithographic implications for Cu/low-k integration
JF - Proceedings of SPIE
DO - 10.1117/12.354401
DA - 1999-07-26
UR - https://www.deepdyve.com/lp/spie/lithographic-implications-for-cu-low-k-integration-GlF7bV8PC9
SP - 827
EP - 838
VL - 3679
IS - 1
DP - DeepDyve
ER -