TY - JOUR
AU - Takanashi, H.
AB - It is difficult to provide a fine pattern of metal electrode across a step included in the substrate. In order to overcome this difficulty, we have developed a method in which a deposition mask is constructed photolithographically by using a composite with the multilayer structure of negative photoresist layer‐metal layer‐positive photoresist layer. The electrode metal is evaporated through the windows opened in the composite mask. The principle of the present method and detailed procedure are described. The effect of the geometrical configuration of the evaporation setup on the broadening of the defined metal edge is also discussed. This method is applied in order to fabricate a planar Gunn‐effect device. A Schottky gate electrode with a width of 2 μm is delineated across a bevel with a height of 3.5 μm.
TI - An Improved Photolithographic Method of Metallization Applied to Fabrication of Planar Gunn‐Effect Devices
JF - Journal of the Electrochemical Society
DO - 10.1149/1.2132841
DA - 1976-03-01
UR - https://www.deepdyve.com/lp/iop-publishing/an-improved-photolithographic-method-of-metallization-applied-to-Gg30xjugjI
SP - 420
EP - 423
VL - 123
IS - 3
DP - DeepDyve
ER -