TY - JOUR
AU - Sinkevich, V. F.
AB - GaN heterostructures on silicon substrates have been grown by metalorganic chemical vapor deposition. Transistors with the gate periphery of 1.32 mm are designed. The saturation power of the package die at a frequency of 1 GHz was 4 and 6.3 W at supply voltages of 30 and 60 V, respectively. The maximum drain efficiency is 57%.
TI - Power Characteristics of GaN Microwave Transistors on Silicon Substrates
JF - "Technical Physics Letters"
DO - 10.1134/S1063785020030050
DA - 2020-03-28
UR - https://www.deepdyve.com/lp/springer-journals/power-characteristics-of-gan-microwave-transistors-on-silicon-FeAhe56BzE
SP - 211
EP - 214
VL - 46
IS - 3
DP - DeepDyve
ER -