TY - JOUR
AU - Hao, Yue
AB - A GaN-based high electron mobility transistor (HEMT) with p-GaN islands buried layer (PIBL) for terahertz applications is proposed. The introduction of a p-GaN island redistributes the electric field in the gate–drain channel region, thereby promoting the formation of electronic domains in the two-dimensional electron gas (2DEG) channel. The formation and regulation mechanism of the electronic domains in the device are investigated using Silvaco-TCAD software. Simulation results show that the 0.2 μm gate HEMT with a PIBL structure having a p-GaN island doping concentration (Np) of 2.5 × 1018 cm−3–3 × 1018 cm−3 can generate stable oscillations up to 344 GHz–400 GHz under the gate–source voltage (Vgs) of 0.6 V. As the distance (Dp) between the p-GaN island and the heterojunction interface increases from 5 nm to 15 nm, the fundamental frequency decreases from 377 GHz to 344 GHz, as well as the ratio of oscillation current amplitude of the fundamental component to the average component If/Iavg ranging from 2.4% to 3.84%.
TI - Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications
JF - Chinese Physics B
DO - 10.1088/1674-1056/ac2b1f
DA - 2022-04-01
UR - https://www.deepdyve.com/lp/iop-publishing/current-oscillation-in-gan-hemts-with-p-gan-islands-buried-layer-for-EmI2AIzips
VL - 31
IS - 5
DP - DeepDyve
ER -