TY - JOUR
AU - Miura, Masashi
AB - Improvements of gettering actions in the prototype  thin‐film silicon epitaxial wafers (1 μm thick film) have been investigated in conjunction with avoiding failures of crystal‐originated “particles” which degraded isolation leakage between memory cells of densely packed metal‐oxide‐semiconductor (MOS) devices. In order to compensate for the appearance of a kink in current-voltage curves in MOS capacitors caused by undesirable impurities, an optimized gettering and evaluation method are proposed, leading to a low‐cost Czochralski‐grown substrate. We pinpointed the importance of the epitaxial thickness, proposing an improved type of  epitaxial wafer with a 3–5 μm thick film that is cheaper than current  epitaxial wafers. This  epitaxial wafer meets the requirements for future miniaturized devices formed on large diameter wafers (e.g., 300 mm diam wafers). © 2000 The Electrochemical Society. All rights reserved.
TI - Low‐Cost p  −  / p  −  Epitaxial Silicon Wafers for Densely Packed Metal‐Oxide‐Semiconductor Devices
JF - Journal of the Electrochemical Society
DO - 10.1149/1.1393460
DA - 2000-05-01
UR - https://www.deepdyve.com/lp/iop-publishing/low-cost-p-p-epitaxial-silicon-wafers-for-densely-packed-metal-oxide-EM58TuTQlV
SP - 1930
EP - 1935
VL - 147
IS - 5
DP - DeepDyve
ER -