TY - JOUR
AU - González-Díaz, G.
AB - In this work we present a new method to fabricate improved TiO2 films by using a high-pressure sputtering system. In order to minimize the damage induced in the substrate surface by the ion bombardment, a high chamber pressure of 100 Pa is used, which is very much higher than typical values in conventional systems. We present results obtained by X-ray diffraction and FTIR spectroscopy. Moreover, we will compare the properties of the resulting TiO2-insulator-metal capacitors with those of anodic Ta2O5. Very thin films of TiO2 have been obtained with a very promising quality for future electron device fabrication.
TI - A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide
JF - Journal of Materials Science: Materials in Electronics
DO - 10.1023/A:1023952718281
DA - 2004-10-06
UR - https://www.deepdyve.com/lp/springer-journals/a-comparative-study-of-anodic-tantalum-pentoxide-and-high-pressure-EBVP1i6SmW
SP - 375
EP - 378
VL - 14
IS - 7
DP - DeepDyve
ER -