TY - JOUR
AU - Wang, Yangyuan
AB - In this paper, a novel single-poly electrically erasable programmable read-only memory (EEPROM) using a metal finger coupling capacitor is proposed and fabricated with a pure logic CMOS process. The metal interconnect layer is applied to form the finger-type capacitor which can be used as the coupling capacitor in the EEPROM cell. Using the metal finger capacitor, the proposed cell exhibits the advantages of a metallic control gate and features a higher coupling ratio to achieve smaller cell area and lower program/erase voltage. The program/erase characteristics, endurance and retention performances are presented. In addition, the EEPROM cell with a stacked metal finger structure can further improve the coupling ratio. Thus, lower operation voltage can be obtained without increasing the cell area.
TI - Performance improvement of the EEPROM cells with the standard logic process featuring a metal finger coupling capacitor
JF - Semiconductor Science and Technology
DO - 10.1088/0268-1242/25/12/125003
DA - 2010-12-10
UR - https://www.deepdyve.com/lp/iop-publishing/performance-improvement-of-the-eeprom-cells-with-the-standard-logic-CQug0bscUT
SP - 125003
VL - 25
IS - 12
DP - DeepDyve
ER -