TY - JOUR
AU1 - Nihei, Mizuhisa
AU2 - Kawabata, Akio
AU3 - Awano, Yuji
AB - By using plasma-enhanced chemical vapor deposition (p-CVD), we grew vertically aligned multiwall carbon nanotubes (CNTs) directly on a nickel-silicide layer, which can be used as electrodes for metal-oxide-semiconductor field-effect transistors (MOSFETs). By using a nickel-silicide layer as a catalyst, the nanotube diameter became smaller than that possible with a nickel film catalyst. We suggest that Ni-silicide composition plays an important role in controlling the diameter of the nanotubes. To our knowledge, this is the first report on diameter-controlled vertically aligned CNT growth on catalytic metal-silicide substrates. 
TI - Direct Diameter-Controlled Growth of Multiwall Carbon Nanotubes on Nickel-Silicide Layer
JF - Japanese Journal of Applied Physics
DO - 10.1143/JJAP.42.L721
DA - 2003-06-01
UR - https://www.deepdyve.com/lp/iop-publishing/direct-diameter-controlled-growth-of-multiwall-carbon-nanotubes-on-C0XeKLtUqc
SP - L721
VL - 42
IS - 6B
DP - DeepDyve
ER -