TY - JOUR
AU - Virani, H.
AB - Active and Passive Elec. Comte., Vol. 21, (C) 1998 OPA Publishers 998. pp. 47- 65 (Overseas Association) N.V. Published license under Reprints available directly from the publisher by Photocopying permitted by license only the Gordon and Breach Science Publishers imprint. Printed in India. MEMORIES SEMICONDUCTOR H. VIRANI Electrical LTD Unit Rd. Kassam Bros. M 20 Mineola East Mississ Auga L5G 4N9 CANADA 30 3 (Received September, 1996; In January, 1997) finalform 1 INTRODUCTION There is a vast amount of work in research estab- development proceeding lishments of semiconductor manufacturers, the aim of which is competing to discover the ideal electronic device. It would be small, memory cheap, fast, use little power, and retain its data in the event of indefinitely power removal. Some have a commitment to technol- supply companies bipolar because of historical of the and invest- ogy development company past ment of whereas others are on capital concentrating developing unipolar technology. This has lead to claims of the of a tech- competing superiority nology for a given application. I summarises the of the Table present (1996) position competing types of logic circuit. In it will be seen that the desirable attributes are not obtained in general one 
TI - Semiconductor Memories
JF - Active and Passive Electronic Components
DO - 10.1155/1998/18137
DA - 1998-01-01
UR - https://www.deepdyve.com/lp/wiley/semiconductor-memories-BRy9Dxn76V
VL - 21
IS - 
DP - DeepDyve
ER -