TY - JOUR
AU1 - Khramova, O.
AU2 - Mikhalevsky, V.
AU3 - Parshina, L.
AU4 - Novodvorsky, O.
AU5 - Marenkin, S.
AU6 - Lotin, A.
AU7 - Cherebilo, E.
AU8 - Aronzon, B.
AU9 - Aronov, A.
AU1 - Panchenko, V.
AB - The p-(InSb + MnSb)/n-InSb diode structures have been produced by the pulse laser deposition method on the n-InSb single-crystal substrates from the targets in which positive giant magnetoresistance at 298 K in forward bias and at the application of the magnetic field of 0.15 T was observed. The I–V characteristics of the diode structure changed under the application of a magnetic field both in the plane of the structure, and perpendicular to it at the room temperature. The current magnitude of diode at a voltage of 1 V in the magnetic field 0.15 T, parallel and perpendicular to the plane of the diode structure, decreased by more than by 3 times from 28 to 8.2 mA and than by 10 times from 28 to 2.7 mA accordingly The values of parasitic resistance, the size of magneto-resistive effect for the p-(InSb + MnSb)/n-InSb diode have been defined without application of a field and in the presence of the 0.15 T magnetic field in the plane and perpendicular to the transition plane. The spin polarization of carriers has been calculated.
TI - Magnetoresistance of the p-(InSb+MnSb)/n-InSb diode structure
JF - Optical and Quantum Electronics
DO - 10.1007/s11082-016-0609-8
DA - 2016-06-25
UR - https://www.deepdyve.com/lp/springer-journals/magnetoresistance-of-the-p-insb-mnsb-n-insb-diode-structure-AsFvyKP0kp
SP - 1
EP - 8
VL - 48
IS - 7
DP - DeepDyve
ER -