TY - JOUR
AU - Ohta, Hiromichi
AB - We show herein fabrication and field-modulated thermopower for KTaO3 single-crystal based field-effect transistors (FETs). The KTaO3 FET exhibits field-effect mobility of ∼8 cm2 V-1 s-1, which is ∼4 times larger than that of SrTiO3 FETs. The thermopower of the KTaO3 FET decreased from 600 to 220 V K-1 by the application of gate electric field up to 1.5 MV cm-1, ∼400 V K-1 below that of an SrTiO3 FET, clearly reflecting the smaller carrier effective mass of KTaO3. 
TI - Electric-Field Modulation of Thermopower for the KTaO3 Field-Effect Transistors
JO - Applied Physics Express
DO - 10.1143/APEX.2.121103
DA - 2009-12-01
UR - https://www.deepdyve.com/lp/iop-publishing/electric-field-modulation-of-thermopower-for-the-ktao3-field-effect-ApLMHVgt0L
SP - 121103
VL - 2
IS - 12
DP - DeepDyve
ER -