TY - JOUR
AU - Vanroijen, Raymond
AB - ZnMgSSe/ZnSSe/ZnCdSe laser structures were grown on n-type GaAs substrates by Molecular Beam Epitaxy (MBE). We have mounted lasers substrate up and substrate down and measured the thermal resistance. We have also fabricated index-guided and gain-guided laser devices enabling a direct comparison of their optical and electrical performance. Thermal measurements were made on gain-guided devices soldered substrate-up and substrate-down onto a copper heat sink. For devices with contact stripe width of 20 X 600 micrometers 2 , the thermal resistance is 48 Kelvin/Watt for substrate down mounting and 31 Kelvin/Watt for substrate-up mounting. CW lasing has been obtained for both mounting configurations. To allow for a direct comparison, 10 micrometers wide gain- guided structures were fabricated using an oxide as an insulating layer beside the contact stripe. The laser threshold voltage was 15 volts for this case. Both 2.5 micrometers and 10 micrometers width index-guided lasers were fabricated using reactive ion etching. The structure is a mesa etched to a depth to produce a real lateral refractive index step of approximately 3 X 10 -3 . No facet coatings were used. When operated with 100 nsec pulses, the gain-guided devices have an external differential efficiency of .25 Watts/Amp and a strongly astigmatic beam. The 10 micrometers width index-guided devices show a clear reduction in astigmatism and an improvement of external differential efficiency to .33 Watts/Amp. The threshold current density and voltage remain the same.
TI - Device processing of II-VI semiconductor lasers
JF - Proceedings of SPIE
DO - 10.1117/12.197258
DA - 1994-12-21
UR - https://www.deepdyve.com/lp/spie/device-processing-of-ii-vi-semiconductor-lasers-AlJOURNpKc
SP - 9
EP - 15
VL - 2346
IS - 1
DP - DeepDyve
ER -