TY - JOUR
AU - Yoon, D.
AB - SiN thin films having excellent surface morphology for the optical device application were synthesized using a plasma enhanced chemical vapor deposition (PECVD) method at low temperature (350∘C) using silane (SiH4) and nitrogen (N2). The effects of the SiH4/N2 flow ratio, rf power and annealing on the SiN films were investigated. The optical and structural properties of SiN films were characterized using an ellipsometry, a fourier-transform infrared spectroscopy (FT-IR), and an atomic force microscope (AFM). The refractive index increased from 1.6 to 2.3 as the SiH4/N2 ratio was increased from 0.17 to 1.67. The rms surface roughness decreased from 14.1 to 3.6Å after post-deposition annealing process performed at 800∘C for 1hr in an air ambient. We could fabricate straight waveguides based on a three layer structure and have no problems with step coverage.
TI - Refractive index properties of SiN thin films and fabrication of SiN optical waveguide
JO - Journal of Electroceramics
DO - 10.1007/s10832-006-9710-x
DA - 2006-01-01
UR - https://www.deepdyve.com/lp/springer-journals/refractive-index-properties-of-sin-thin-films-and-fabrication-of-sin-9XuCbo0A8d
SP - 315
EP - 318
VL - 17
IS - 4
DP - DeepDyve
ER -