TY - JOUR
AB - A simple method, using ex situ materialsanalysis for  frequent re-calibration, achieves the precisionand accuracy required for  the growth of semiconductorheterostructures for commercial device  fabrication. Electricalcharacteristics of tunnel devices from wafers grown  monthsapart using this method have very little variation.
TI - Precision growth for the manufacture of semiconductor heterostructure devices
JF - Semiconductor Science and Technology
DO - 10.1088/0268-1242/16/8/306
DA - 2001-08-01
UR - https://www.deepdyve.com/lp/iop-publishing/precision-growth-for-the-manufacture-of-semiconductor-heterostructure-9IDklDauyf
SP - 676
VL - 16
IS - 8
DP - DeepDyve
ER -