TY - JOUR
AU1 - Pillai, R.
AU2 - Starikov, D.
AU3 - Bensaoula, A.
AB - Employment of layered structures made of semiconductor materials with different optical absorption bands is a new way of realizing either broad band spectrum or selective multiple band photodetectors. A new concept of structures fabricated using stacked semiconducting layers to obtain a multi band spectral response is reported. Based on this approach, fabrication of a Solar-blind dual-band UV/IR photodetectors is demonstrated. Optimization of the device was carried out by modeling of the electric field distribution and developing tunneling barriers. The optimized Solar-blind UV/IR photodiode UV spectral response turns-on approximately around 265 nm (solar-blind) and peaks at 230 nm with a responsivity of approximately 0.0018 A/W. The IR diode response peaks at 1000nm with a responsivity of approximately 0.01 A/W.
TI - Employment of III-nitride/silicon heterostructures for dual-band UV/IR photodiodes
JF - Proceedings of SPIE
DO - 10.1117/12.809934
DA - 2009-02-12
UR - https://www.deepdyve.com/lp/spie/employment-of-iii-nitride-silicon-heterostructures-for-dual-band-uv-ir-8Hpb4sppoD
SP - 72161Y
EP - 72161Y-9
VL - 7216
IS - 1
DP - DeepDyve
ER -