TY - JOUR
AU - Holmén, G
AB - Resistors, diodes and transistors have been produced in silicon on sapphire using ion implantation as a doping technique. In addition, resistors made in the nonimplanted silicon material have been investigated. Lateral edgeless diodes have been made in n-type silicon. The forward and the reverse current-voltage characteristics are determined by the recombination and generation current, respectively. N-channel and p-channel transistors with a self-aligned aluminium gate have been fabricated. The channel length was 5 m and the width was 100 m. Typical values of gm at VDS = 8 V and IDS = 2 mA are 600 mho and 400 mho for n-channel and p-channel devices. The leakage currents are 7 × 10-11 A m-1 and 3 × 10-12 A m-1, respectively. Details of the processing procedure are given.
TI - Ion Implanted Devices in Silicon on Sapphire
JO - Physica Scripta
DO - 10.1088/0031-8949/22/3/016
DA - 1980-01-01
UR - https://www.deepdyve.com/lp/iop-publishing/ion-implanted-devices-in-silicon-on-sapphire-878vBQjRm3
SP - 308
VL - 22
IS - 3
DP - DeepDyve
ER -