TY - JOUR
AU - Weiss, Rudolf M.
AB - Proximity correction schemes as used in electron beam lithography require the determination of electron scattering within the exposed resist and underlying substrate material. Scattering of an electron beam in a solid can be described by a double Gaussian function with coefficients (alpha) (forward scattering), (beta) (backward scattering), and (eta) E (ratio of energy deposition due to backscattering and forward scattering). These three coefficients are also referred to as 'proximity parameters.' This paper discussed proximity parameters mainly as a function of resist thickness. New experimental results are reported.
TI - Application of an electron-beam scattering parameter extraction method for proximity correction in direct-write electron-beam lithography
JF - Proceedings of SPIE
DO - 10.1117/12.47356
DA - 1991-08-01
UR - https://www.deepdyve.com/lp/spie/application-of-an-electron-beam-scattering-parameter-extraction-method-7nq3PBETWH
SP - 192
EP - 200
VL - 1465
IS - 1
DP - DeepDyve
ER -