TY - JOUR
AU1 - Li, Y.
AU2 - Senawiratne, J.
AU3 - Xia, Y.
AU4 - Zhao, W.
AU5 - Zhu, M.
AU6 - Detchprohm, T.
AU7 - Wetzel, C.
AB - Under external laser excitation, we studied the electroluminescence (EL) of GaInN/GaN green light emitting diodes (LEDs) grown on sapphire by metal organic vapor phase epitaxy. The EL intensity was found to be greatly enhanced under the photon bias. This enhancement strongly supersedes the photoluminescence (PL) signal. The EL enhancement varied with injection carrier density. The relative EL enhancement under 325‐nm laser bias starts with a high ratio and decreases monotonically. This increase of the EL intensity is tentatively attributed to a balance between photocarrier screening and carrier drift within the active region. These findings elucidate the transition from highly efficient recombination at low current density to the region of efficiency droop at high current densities. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
TI - Photon modulated electroluminescence of GaInN/GaN multiple quantum well light emitting diodes
JF - Physica Status Solidi (C): Current Topics in Solid State Physics
DO - 10.1002/pssc.200778713
DA - 2008-05-01
UR - https://www.deepdyve.com/lp/wiley/photon-modulated-electroluminescence-of-gainn-gan-multiple-quantum-7KkkfkyGut
SP - 2293
EP - 2295
VL - 5
IS - 6
DP - DeepDyve
ER -