TY - JOUR
AU1 - Kaneto, Keiichi
AU2 - Mori, Keiko
AU3 - Morita, Takeomi
AU4 - Takashima, Wataru
AB - Organic memory devices have been fabricated using poly(3-hexylthiophene), P3HT, and a polyimide (PI) insulator film. The structure of the device was similar to that of field-effect transistors with an additional metal floating gate of Al or Ca. The memory effects were examined by comparing current–voltage characteristics between cells with and without the floating gate. It was found that the memory effects were induced by light illumination in the cell having the floating gate with a decay time in the range of 1500–2500 s for the drain current, but not in the cell without the floating gate. The gate-induced memory effects were confirmed in the decay time of the drain current after the gate voltage was turned off. The retention time depended on the gate bias and was reduced by the light illumination. The results were discussed using a model, in which the gate voltage enhanced the trapping of electrons at the floating gate. 
TI - Memory Effects in Poly(3-hexylthiophene) Field-Effect Transistors with Floating Gate
JF - Japanese Journal of Applied Physics
DO - 10.1143/JJAP.47.1382
DA - 2008-02-01
UR - https://www.deepdyve.com/lp/iop-publishing/memory-effects-in-poly-3-hexylthiophene-field-effect-transistors-with-5zVCm0rnPj
SP - 1382
VL - 47
IS - 2S
DP - DeepDyve
ER -