TY - JOUR
AU - Khan, Mohamed A.
AB - We describe optoelectronic effects in GaN/AlGaN Heterostructure Field Effect Transistors (HFETs) and Heterostructure Insulated Gate Field Effect Transistors (HIGFETs). GaN/AlGaN HFETs operate as visible blind photodetectors with responsivities as high as several thousand A/W for wavelengths from 200 to 365 nanometers. GaN/AlGaN HIGFETs exhibit light- sensitive long term current-voltage characteristic collapse after an application of a high drain- to-source bias. This collapse is removed by illumination with light with certain wavelengths. We suggest that this collapse is a consequence of hot electron trapping in the AlN barrier layer near the drain edge of the gate.
TI - Optoelectronic GaN-based field effect transistors
JF - Proceedings of SPIE
DO - 10.1117/12.206879
DA - 1995-04-24
UR - https://www.deepdyve.com/lp/spie/optoelectronic-gan-based-field-effect-transistors-5z4JR9G35S
SP - 294
EP - 303
VL - 2397
IS - 1
DP - DeepDyve
ER -