TY - JOUR
AU - Cheng, Hui‐Ming
AB - As Moore's law approaches its physical limits, 3D integrated circuit (3D IC) technology has emerged as a crucial way to increase chip integration density. Due to their small size, high carrier mobility, and low power consumption, carbon nanotube field‐effect transistors (CNTFETs) offer a promising way to overcome the limitations imposed by Moore's law. The evolution of ICs and 3D integration technologies for the post‐Moore era, such as chiplets and multilayer stacking are reviewed, and the potential applications and value of CNTFETs in 3D optoelectronics, memory, and monolithic 3D ICs are explored. The prospects of novel device structures like FinFETs and gate‐all‐around FETs are also discussed. CNT 3D ICs have tremendous potential for these applications, but challenges remain in material fabrication, device performance, and 3D structure design. Researchers are actively exploring solutions such as optimizing fabrication processes, developing new materials, and innovative logic design methodologies. Notably, the integration of CNTFETs with chiplet technology promises more efficient and flexible chip design and manufacturing, catering to the future demand for high‐performance, low‐power, and high‐density ICs.
TI - Carbon Nanotube 3D Integrated Circuits: From Design to Applications
JF - Advanced Functional Materials
DO - 10.1002/adfm.202424012
DA - 2025-03-26
UR - https://www.deepdyve.com/lp/wiley/carbon-nanotube-3d-integrated-circuits-from-design-to-applications-5iXtFJ4kov
VL - Early View
IS - 
DP - DeepDyve
ER -