TY - JOUR
AU1 - Liu, Yan
AU2 - Niu, Jiebin
AU3 - Wang, Hongjuan
AU4 - Han, Genquan
AU5 - Zhang, Chunfu
AU6 - Feng, Qian
AU7 - Zhang, Jincheng
AU8 - Hao, Yue
AB - Well-behaved Ge quantum well (QW) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) were fabricated on silicon-on-insulator (SOI) substrate. By optimizing the growth conditions, ultrathin fully strained Ge film was directly epitaxially grown on SOI at about 450 °C using ultra-high vacuum chemical vapor deposition. In situ Si2H6 passivation of Ge was utilized to form a high-quality SiO2/Si interfacial layer between the high-κ dielectric and channels. Strained Ge QW pMOSFETs achieve the significantly improved effective hole mobility μ
eff as compared with the relaxed Si and Ge control devices. At an inversion charge density of Q
inv of 2 × 1012 cm−2, Ge QW pMOSFETs on SOI exhibit a 104% μ
eff enhancement over relaxed Ge control transistors. It is also demonstrated that μ
eff of Ge pMOSFETs on SOI can be further boosted by applying an external uniaxial compressive strain.
TI - Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress
JF - Nanoscale Research Letters
DO - 10.1186/s11671-017-1913-3
DA - 2017-02-16
UR - https://www.deepdyve.com/lp/springer-journals/strained-germanium-quantum-well-pmosfets-on-soi-with-mobility-5PH8ea8fBj
SP - 1
EP - 5
VL - 12
IS - 1
DP - DeepDyve
ER -