TY - JOUR
AU - Fröschle, E.
AB - Very homogeneous  layers were prepared by rf sputtering of  in Ar or Si in  with Ar on Si substrates which had been cleaned in situ by sputter etching. After a short anneal in  (20 min at 1050°C and a 10 min postmetallization anneal at 500°C), surface charge, surface‐state density, and stability were similar to those reported for good, thermally grown oxides. Best results were obtained with reactively sputtered .
TI - High Quality RF‐Sputtered Silicon Dioxide Layers
JF - Journal of the Electrochemical Society
DO - 10.1149/1.2132759
DA - 1976-01-01
UR - https://www.deepdyve.com/lp/iop-publishing/high-quality-rf-sputtered-silicon-dioxide-layers-5IH2OBf1vc
SP - 30
EP - 33
VL - 123
IS - 1
DP - DeepDyve
ER -