TY - JOUR
AU - Nanda, Umakanta
AB - In today’s world, semiconductor nanowire GAA-MOSFET devices have stimulated a lot of scientific research interest in the field of semiconductor. It has been observed as one of the strong and gifted structure for future generation nano-scaled devices and integrated circuits (ICs). Basically, the term nanotechnology is the key powerhouse of semiconductor device engineering and technology to produce and operate the materials at nano-meter scale (10−9 m or 1 nm) either by top-down approach where the bulk materials are converted to a group of nano particles (atoms) or by bottom-up approach where the single groups of nano particles (atoms) are converted to the bulk materials. Nanowire GAA MOSFET is considered as work horse in semiconductor industry due to great electrostatic controllability over the channel and tight coupling. This review article investigates the different structural designs of nanowire devices using nanotechnology approaches for future device applications.
TI - Silicon Nanowire GAA-MOSFET: a Workhorse in Nanotechnology for Future Semiconductor Devices
JF - Silicon
DO - 10.1007/s12633-021-01136-x
DA - 2022-05-01
UR - https://www.deepdyve.com/lp/springer-journals/silicon-nanowire-gaa-mosfet-a-workhorse-in-nanotechnology-for-future-5GUAxKX0Wu
SP - 3163
EP - 3171
VL - 14
IS - 7
DP - DeepDyve
ER -