TY - JOUR
AU - Hahn, Cheol Koo
AB - This article presents a high‐power and high‐efficiency saturated Doherty amplifier using a GaN high electron mobility transistor for 3.5 GHz Worldwide Interoperability for Microwave Access application.The saturated Doherty amplifier is a Doherty amplifier based on class‐F amplifiers, resulting in higher efficiency than a conventional Doherty amplifier. The distributed‐type harmonic control circuit is located between a power transistor and an output matching circuit. From the measured results for a continuous wave of 3.5 GHz, the saturated Doherty amplifier attains a high P3dB of 45 dBm and a power gain of about 8.8 dB. Also, the proposed Doherty amplifier provides a high power‐added‐efficiency (PAE) of 37.7% and a drain efficiency of 42.7% at 6‐dB back‐off output power region from P3dB, which are 8.7% and 5.7% higher than those of the conventional Doherty amplifier. Compared to the single class‐AB amplifier, we obtain 17.7% and 19.7% improvement of PAE and drain efficiency, respectively. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 570–573, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24977
TI - Efficiency enhancement of the Doherty amplifier for 3.5 GHz WiMAX application using class‐F circuitry
JF - Microwave and Optical Technology Letters
DO - 10.1002/mop.24977
DA - 2010-03-01
UR - https://www.deepdyve.com/lp/wiley/efficiency-enhancement-of-the-doherty-amplifier-for-3-5-ghz-wimax-5CcYb07rQA
SP - 570
EP - 573
VL - 52
IS - 3
DP - DeepDyve
ER -