TY - JOUR
AU - Hou, Lintao
AB - Solution-processed CdTe semiconductor nanocrystals (NCs) have exhibited astonishing potential in fabricating low-cost, low materials consumption and highly efficient photovoltaic devices. However, most of the conventional CdTe NCs reported are synthesized through high temperature microemulsion method with high toxic trioctylphosphine tellurite (TOP-Te) or tributylphosphine tellurite (TBP-Te) as tellurium precursor. These hazardous substances used in the fabrication process of CdTe NCs are drawing them back from further application. Herein, we report a phosphine-free method for synthesizing group II-VI semiconductor NCs with alkyl amine and alkyl acid as ligands. Based on various characterizations like UV-vis absorption (UV), transmission electron microscope (TEM), and X-ray diffraction (XRD), among others, the properties of the as-synthesized CdS, CdSe, and CdTe NCs are determined. High-quality semiconductor NCs with easily controlled size and morphology could be fabricated through this phosphine-free method. To further investigate its potential to industrial application, NCs solar cells with device configuration of ITO/ZnO/CdSe/CdTe/Au and ITO/ZnO/CdS/CdTe/Au are fabricated based on NCs synthesized by this method. By optimizing the device fabrication conditions, the champion device exhibited power conversion efficiency (PCE) of 2.28%. This research paves the way for industrial production of low-cost and environmentally friendly NCs photovoltaic devices.
TI - Synthesis of Group II-VI Semiconductor Nanocrystals via Phosphine Free Method and Their Application in Solution Processed Photovoltaic Devices
JF - Nanomaterials
DO - 10.3390/nano11082071
DA - 2021-08-15
UR - https://www.deepdyve.com/lp/multidisciplinary-digital-publishing-institute/synthesis-of-group-ii-vi-semiconductor-nanocrystals-via-phosphine-free-4yt1nxwmIM
SP - 2071
VL - 11
IS - 8
DP - DeepDyve
ER -