TY - JOUR
AU1 - Xuan, Yu
AU2 - Zhao, Nana
AU3 - Pan, Daocheng
AU4 - Ji, Xiangling
AU5 - Wang, Zhiyuan
AU6 - Ma, Dongge
AB - Near infrared (NIR) light emitting diodes employing composites of an IR fluorescent dye, CdSe/CdS core/shell semiconductor quantum dots and poly(N-vinylcarbazole) (PVK) have been demonstrated. The device, with a configuration of indium-tin-oxide (ITO)//PEDOT:PSS//PVK:NIR Dye:CdSe/CdS//Al, had a turn-on voltage of 7 V, emitted the NIR light with a maximum at 890 nm and the irradiance intensity of 96 µW. The electroluminescence efficiency of 0.02% was achieved at a current density of 13 mA cm2.
TI - Near infrared light-emitting diodes based on composites of near infrared dye, CdSe/CdS quantum dots and polymer
JF - Semiconductor Science and Technology
DO - 10.1088/0268-1242/22/9/008
DA - 2007-09-01
UR - https://www.deepdyve.com/lp/iop-publishing/near-infrared-light-emitting-diodes-based-on-composites-of-near-4tL39LgdGa
SP - 1021
VL - 22
IS - 9
DP - DeepDyve
ER -