TY - JOUR
AU - Christensen, Adam
AB - The temperature distribution of a dual Multi-Quantum Well (MQW) light emitting diode (LED) has been investigated using both infrared imaging and micro-Raman Spectroscopy; mean values over the device yielded temperatures ranging from 30-75°C. The InGaN/GaN based LED, grown by Metal Organic Chemical Vapor Deposition (MOCVD), was also studied using the 3३ method in order to determine an effective thermal conductivity of the MQW stack in the temperature range from 300-540K. The LED structure under investigation showed effective thermal conductivities in the range from 82-140 W/mK with the peak conductivity occurring at 440K, well above room temperature. Using temperature dependent properties determined experimentally, a numerical model of the LED structure was developed in order to study the effect that the package thermal resistance and input power has on the temperature of the device.
TI - Thermal design considerations in the packaging of GaN based light emitting diodes
JF - Proceedings of SPIE
DO - 10.1117/12.625956
DA - 2005-08-18
UR - https://www.deepdyve.com/lp/spie/thermal-design-considerations-in-the-packaging-of-gan-based-light-4JQ1kr9JSF
SP - 594118
EP - 594118-14
VL - 5941
IS - 1
DP - DeepDyve
ER -