TY - JOUR
AU1 - Navarro, A.
AU2 - Martinez, O.
AU3 - Galiana, B.
AU4 - Lombardero, I.
AU5 - Ochoa, M.
AU6 - García, I.
AU7 - Gabás, M.
AU8 - Ballesteros, C.
AU9 - Jimenez, J.
AU1 - Algora, C.
AB - The effects of ex situ annealing in N ambient and in situ annealing in As ambient on GaNSbAs/GaAs structures grown by molecular beam epitaxy were investigated by low temperature cross-sectional cathodoluminescence (CL). The amount and distribution of Sb was measured by energy dispersive spectroscopy (EDS). The cross-sectional CL analysis of all samples reveals a shift of the near band edge (NBE) emission along the growth axis, presumably associated with a non-uniform incorporation of Sb during the growth process, in agreement with the Sb distribution measured by EDS in the as-grown sample. The NBE emission in the annealed samples presents a redshift with respect to the as-grown sample. This effect might be explained by a redistribution/activation of N in the GaNSbAs lattice since the Sb distribution measured by EDS does not reveal significant changes, within the error margin, with respect to the as-grown sample. The in situ annealed in the As overpressure sample shows the best properties for solar cells applications, i.e., a NBE peak position close to 1.0 eV and the lowest full width at half maximum of this emission.
TI - Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys
JF - Journal of Electronic Materials
DO - 10.1007/s11664-018-6325-3
DA - 2018-05-30
UR - https://www.deepdyve.com/lp/springer-journals/cathodoluminescence-characterization-of-dilute-nitride-gansbas-alloys-3oYnmK01tV
SP - 5061
EP - 5067
VL - 47
IS - 9
DP - DeepDyve
ER -