TY - JOUR
AU1 - Grekov, E. V.
AU2 - Sukhorukov, O. G.
AB - The steady‐state space‐charge‐limited current at high electric fields in an insulator or high‐resistance semiconductor with traps is analyzed theoretically. Poole‐Frenkel carrier emission from traps is considered. The analysis of the space‐charge centroid yields a current–voltage characteristic in analytical form. These results are compared with experimental data on the conductivity of Si3N4 films. The obtained characteristic gives a good fit to the observed relation between the current and the film thickness. The trap density in Si3N4 is determined to be (5 to 8) × 1018 cm−3.
TI - Space‐Charge‐Limited Currents at High Electric Fields
JF - Physica Status Solidi (B) Basic Solid State Physics
DO - 10.1002/pssb.2221650118
DA - 1991-01-01
UR - https://www.deepdyve.com/lp/wiley/space-charge-limited-currents-at-high-electric-fields-3kkVTli80h
SP - 219
EP - 228
VL - 165
IS - 1
DP - DeepDyve
ER -