TY - JOUR
AU - Riel, Heike
AB - Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.
TI - Tunnel field-effect transistors as energy-efficient electronic switches
JF - Nature
DO - 10.1038/nature10679
DA - 2011-11-16
UR - https://www.deepdyve.com/lp/springer-journals/tunnel-field-effect-transistors-as-energy-efficient-electronic-3LBAhZAkJG
SP - 329
EP - 337
VL - 479
IS - 7373
DP - DeepDyve
ER -