TY - JOUR
AU - Ji, Chen
AB - High power single-mode ridge waveguide 1060-nm semiconductor lasers are reported. The lasers consist ofcompressively strained double InGaAs/GaAs quantum wells and a GaAs/AlGaAs separate confinement vertical structure.A super large vertical optical cavity is employed to have a low internal loss, large optical spot size and low verticaloptical divergence angle. The material composition and thickness of waveguide layers and claddings layer are optimizedsystematically. The active layer is detuned from center of the waveguide and thickness of cladding layers is optimized toguaranty single mode lasing of the large optical cavity. The large vertical cavity laser structure with thickness of 4 μmallows the lasers have a low internal loss of less than 0.6 /cm, a large optical spot size about 1μm and a verticaldivergence angle about 20 degree. For lateral optical confinement, a double trench ridge waveguide is employed tomaintain single-lateral-mode operation. Based on the optimization, 1.5 W continue wave optical power is achieved forbroad area lasers with 1mm longitude cavity length. Narrow stripe ridge waveguide lasers of 1mm cavity length withsingle mode current and optical power of 700 mA and 340 mW is obtained. Suggestions for further improvements interms of single mode power and applications of the high power semiconductors are discussed.
TI - High power 1060-nm super large vertical cavity semiconductor lasers
JF - Proceedings of SPIE
DO - 10.1117/12.2071443
DA - 2014-11-17
UR - https://www.deepdyve.com/lp/spie/high-power-1060-nm-super-large-vertical-cavity-semiconductor-lasers-3Hf0ayc7eq
SP - 92660O
EP - 92660O-6
VL - 9266
IS - 
DP - DeepDyve
ER -