TY - JOUR
AU - Qiao-Li, Niu
AB - This paper reports that the n-type organic thin-film transistors have been fabricated by using C60 as the active layer and polystyrene as the dielectric. The properties of insulator and the growth characteristic of C60 film were carefully investigated. By choosing different source/drain electrodes, a device with good performance can be obtained. The highest electron field effect mobility about 1.15 cm2/(V · s) could reach when Barium was introduced as electrodes. Moreover, the C60 transistor shows a negligible hysteresis effect contributed to the hydroxyl-free of insulator. The result suggests that polymer dielectrics are promising in applications among n-type organic transistors.
TI - Properties of C60 thin film transistor based on polystyrene
JF - Chinese Physics B
DO - 10.1088/1674-1056/19/7/077305
DA - 2010-07-01
UR - https://www.deepdyve.com/lp/iop-publishing/properties-of-c60-thin-film-transistor-based-on-polystyrene-2zCO6AKaWz
SP - 077305
VL - 19
IS - 7
DP - DeepDyve
ER -