TY - JOUR
AU - 
AB - Demonstration of directly modulated silicon Raman laser Ozdal Boyraz and Bahram Jalali Optoelectronic Circuits and Systems Laboratory University of California, Los Angeles Los Angeles, CA 90095-1594 jalali@ucla.edu http://www.ee.ucla.edu/~oecs/ Abstract: The first Raman laser with intra-cavity electronic switching is demonstrated. Digital control of intra-cavity gain is attained by using a diode gain cavity. In contrast to traditional Raman lasers, the Raman laser reported here is made from pure silicon and can be directly modulated to transmit data. Room temperature operation with 2.5W peak laser output power is demonstrated. © 2005 Optical Society of America OCIS codes: (190.4390) Nonlinear optics, integrated optics, (230.4320) Nonlinear optical devices, (230.7370) Waveguides, (250.5300) Photonic integrated circuits, (140.3550) Lasers, Raman, (140.5960) Semiconductor lasers References and links 1. R. Claps, D. Dimitropoulos, and B. Jalali, “Stimulated Raman scattering in silicon waveguides,” Electronics Lett. 38, 1352-1354 (2002). 2. Ozdal Boyraz and Bahram Jalali, “Demonstration of a silicon Raman laser,” Opt. Express 12, 5269-5273 (2004), http://www.opticsexpress.org/abstract.cfm?URI=OPEX-12-21-5269 3. R.H. Stolen, C. Lin, J. Shah, and R.F. Leheny, “A fiber Raman ring laser,” IEEE J. Quantum Electronics QE-14, 860-862, (1978). 4. S. M. Spillane, T. J. Kippenberg, K. J. Vahala, “Ultralow-threshold Raman laser using spherical dielectric microcavity,” Nature 415, 621-623, (2002). 
TI - Demonstration of directly modulated silicon Raman laser
JF - Optics Express
DO - 10.1364/opex.13.000796
DA - 2005-01-01
UR - https://www.deepdyve.com/lp/unpaywall/demonstration-of-directly-modulated-silicon-raman-laser-2dereS7WQZ
DP - DeepDyve
ER -