TY - JOUR
AU - Son, Jong
AB - Thin films of NiO were deposited on Pt/Ta/glass sub-strates using a radio frequency (RF) sputtering method. The NiO thin films showed polycrystalline nature, indicating preferentially (111)-oriented structure. The resistive random access memory (RRAM) capacitor of a Pt/NiO/Pt structure exhibited unipolar switching characteristics and bistable resistivities for 200 repeated switching cycles. Furthermore, RRAM nanobits array was formed on the NiO thin films by applying a bias. The RRAM nanobits had a diameter of approximately 8 nm and were observed via a conducting atomic force microscope (CAFM). The density of the RRAM nanobits array was estimated to be approximately 0.64 Tbit/cm2.
TI - Resistive switching characteristics and conducting nanobits of polycrystalline NiO thin films
JF - Journal of Electroceramics
DO - 10.1007/s10832-017-0067-0
DA - 2017-01-16
UR - https://www.deepdyve.com/lp/springer-journals/resistive-switching-characteristics-and-conducting-nanobits-of-24ZXP5kMPv
SP - 100
EP - 103
VL - 38
IS - 1
DP - DeepDyve
ER -