TY - JOUR
AU - Choi, Byoungdeog
AB - Body effect is a key characteristic of a dynamic random access memory (DRAM) cell transistor. The conventional method uses a test element structure or nano-probe equipment for body effect measurements. However, the test element structure measurement is inaccurate because the structure is located outside the DRAM chip. Additionally, the nano-probe destroys the chip while measuring the body effect in the chip. Therefore, we developed a novel nondestructive method to measure the body effect in the DRAM. This method uses a memory bitmap test system. The test system was originally a device that determines pass or fail of the cells. However, it was modified to extract the gate voltage that causes the failure due to a cell transistor leakage current. Because the leakage current is correlated to the threshold voltage, this gate voltage is a relative threshold voltage. The body effect was obtained by measuring the relative threshold voltage under different body biases. After confirming the method in a single cell, we simplified the method for a mass cell measurement. Two relative threshold voltages for each body bias were used for a fast and simple test. The mass measurement method could obtain 8196 body cell effects within 2 min. The results of the newly developed method were the same as that of the conventional test element structure measurement.
TI - Novel Method for Nondestructive Body Effect Measurement in Dynamic Random Access Memory
JF - Journal of Electronic Testing
DO - 10.1007/s10836-017-5676-7
DA - 2017-07-22
UR - https://www.deepdyve.com/lp/springer-journals/novel-method-for-nondestructive-body-effect-measurement-in-dynamic-22NQCwueZD
SP - 669
EP - 674
VL - 33
IS - 5
DP - DeepDyve
ER -