TY - JOUR
AU - Stadius, K.
AB - Integrated high performance gallium arsenide and silicon active inductor configurations for microwave frequencies are examined in this article. The existing topologies are considered and a new aspect of comparing the performance of different topologies based on a more complete analysis is utilised. Drawbacks of GaAs technology in this particular case are recognised, while benefits attained by using bipolar technology are presented. A theoretical basis for designing bipolar inductors is examined. On the basis of these studies a new method for raising the Q-factor of an active inductor is found and applied to two novel GaAs Q-enhanced active inductors. New applications for active high-Q resonators are found and their realisation aspects are considered. Integrated test circuits have been designed, and the simulated and experimental results are presented.
TI - Active inductors for GaAs and bipolar technologies
JO - Analog Integrated Circuits and Signal Processing
DO - 10.1007/BF01256445
DA - 2005-02-18
UR - https://www.deepdyve.com/lp/springer-journals/active-inductors-for-gaas-and-bipolar-technologies-1nwIwFDwbe
SP - 35
EP - 48
VL - 7
IS - 1
DP - DeepDyve
ER -