TY - JOUR
AU1 - Sun, Zheng
AU2 - Xu, Yong
AU3 - Ma, Guangyan
AU4 - Shi, Hui
AU5 - Zhao, Fei
AU6 - Lin, Ying
AB - A fully integrated 2n/2n+1 dual-modulus divider in GHz frequency range is presented. The improved structure can make all separated logic gates embed into correlative D flipflops completely. In this way, the complex logic functions can be performed with a minimum number of devices and with maximum speed, so that lower power consumption and faster speed are obtained. In addition, the low-voltage bandgap reference needed by the frequency divider is specifically designed to provide a 1.0 V output. According to the design demand, the circuit is fabricated in 0.18 m standard CMOS process, and the measured results show that its operating frequency range is 1.12.5 GHz. The dual-modulus divider dissipates 1.1 mA from a 1.8 V power supply. The temperature coefficient of the reference voltage circuit is 8.3 ppm/°C when the temperature varies from 40 to +125 °C. By comparison, the dual-modulus divide designed in this paper can possess better performance and flexibility.
TI - An improved fully integrated, high-speed, dual-modulus divider
JF - Journal of Semiconductors
DO - 10.1088/1674-4926/35/11/115005
DA - 2014-11-01
UR - https://www.deepdyve.com/lp/iop-publishing/an-improved-fully-integrated-high-speed-dual-modulus-divider-1dHnssd3xC
SP - 115005
VL - 35
IS - 11
DP - DeepDyve
ER -