TY - JOUR
AU1 - Cai, Yong
AB - In this paper, a novel lateral bipolar transistor on silicon on insulator material is proposed. Dual-sidewalls technology, which is used in some vertical bipolar devices, is applied in this transistor. The first poly-Si sidewall decreases parasitic Cbc capacitor to the lowest level. The second insulator sidewall is used to separate high concentration emitter from base. Different sidewall width will result in different width of intrinsic base. That means thin intrinsic base could be easily achieved by adjusting insulator sidewall. There are other key technologies also, such as: angled implantation, self-aligned silicide. Results of processes simulation show that all the processes are available, the expected structure and profiles are controllable. Device simulation gives an excellent performance: f T is over 30 GHz, DC current gain is over 20. This type of lateral bipolar transistor with high performances should be a potential competitor in RF devices & ICs, and should meet the needs of SOI-BiCMOS ICs.
TI - Lateral bipolar transistor on SOI with dual-sidewalls structure
JF - Proceedings of SPIE
DO - 10.1117/12.444678
DA - 2001-10-15
UR - https://www.deepdyve.com/lp/spie/lateral-bipolar-transistor-on-soi-with-dual-sidewalls-structure-1auIt6GEpy
SP - 203
EP - 207
VL - 4600
IS - 1
DP - DeepDyve
ER -