TY - JOUR
AU - Yang, Peidong
AB - A novel vapor-liquid-solid epitaxy (VLSE) process has been developed to synthesize high-density semiconductor nanowire arrays. The nanowires generally are single crystalline and have diameters of 10-200 nm and aspect ratios of 10-100. The areal density of the array can be readily approach 10 10 cm -2 . Results based on Si and ZnO nanowire systems are reported here.
TI - Semiconductor nanowire array
JF - Proceedings of SPIE
DO - 10.1117/12.472986
DA - 2002-06-25
UR - https://www.deepdyve.com/lp/spie/semiconductor-nanowire-array-0RB0aJUps1
SP - 222
EP - 224
VL - 4806
IS - 1
DP - DeepDyve
ER -