TY - JOUR
AU - Ishii, J.
AB - An overview is presented on the activity with industrial partners to solve problems at the production sites in the semiconductor industry. Based on a survey on temperature needs and techniques in the semiconductor device fabrication industry, two target processes with the most pressing demands for in situ temperature measurements were selected: plasma etching and flash lamp annealing (FLA). A novel approach for emissivity compensated radiation thermometry was applied to sub-millisecond response measurement for FLA. The approach has features that make it suitable for in situ applications. Results of thermal profile measurements conducted on a FLA chamber are described.
TI - In situ Silicon-Wafer Surface-Temperature Measurements Utilizing Polarized Light
JF - International Journal of Thermophysics
DO - 10.1007/s10765-011-1071-2
DA - 2011-09-10
UR - https://www.deepdyve.com/lp/springer-journals/in-situ-silicon-wafer-surface-temperature-measurements-utilizing-0MiUKzB00c
SP - 2304
EP - 2316
VL - 32
IS - 12
DP - DeepDyve
ER -