TY - JOUR
AU - Kennedy, Joseph T.
AB - A sacrificial, spin-on 193nm UV absorbing organosiloxane film has been developed to enable via first trench last (VFTL) copper dual-damascene patterning. The SiO structure intrinsic to the Duo193 BARC provides the required plasma etch selectivity to the thin ArF photoresists in use today. Furthermore, an equivalent plasma etch rate between Duo193 and the low dielectric constant SiOCH films, used as the dielectric layer in the backend Cu interconnect structures, is possible without compromising the photoresist etch selectivity. An equivalent etch rate is a necessary for complete elimination of 'fence' or 'shell' defect found with organic-based BARCs. This work has led to the development of Duo193 organosiloxane based bottom antireflective coatings. Tunable formulation variables, such as BARC solution pH to modulate film acidity, can have a significant effect on bulk and surface film properties. In addition to solution pH, the effect of BARC film bake temperature on wet chemical strip rates was also studied. ArF lithography, plasma etch and selective removal are discussed to focus on the process integration benefits of the planarizing, organosiloxane BARC material.
TI - Organosiloxane-based bottom antireflective coatings for 193-nm lithography
JF - Proceedings of SPIE
DO - 10.1117/12.485158
DA - 2003-06-11
UR - https://www.deepdyve.com/lp/spie/organosiloxane-based-bottom-antireflective-coatings-for-193-nm-0DbhYANKOK
SP - 929
EP - 939
VL - 5039
IS - 1
DP - DeepDyve
ER -