TY - JOUR
AU1 - Ivukin, I.
AU2 - Artem’ev,  D.
AU3 - Bugrov,  V.
AU4 - Odnoblyudov,  M.
AU5 - Romanov,  A.
AB - The stress-strain state in thin structured gallium nitride films on sapphire substrates containing open pores has been simulated. The results have been obtained by the finite element method in the commercial program complex. The stress intensity factor K I has been calculated for the model considering a crack at the GaN/sapphire interface near an open pore. Based on the calculations of elastic fields, the redistribution of stresses by a structure with an ordered array of open pores in gallium nitride films has been estimated.
TI - Simulation of a stress-strain state in thin structured gallium nitride films on sapphire substrates
JF - Physics of the Solid State
DO - 10.1134/S1063783412120165
DA - 2012-12-01
UR - https://www.deepdyve.com/lp/springer-journals/simulation-of-a-stress-strain-state-in-thin-structured-gallium-nitride-02dhMJUAjL
SP - 2421
EP - 2424
VL - 54
IS - 12
DP - DeepDyve
ER -