TY - JOUR
AU1 - Gao, Fei
AU2 - Wang, Jian‐Huan
AU3 - Watzinger, Hannes
AU4 - Hu, Hao
AU5 - Rančić, Marko J.
AU6 - Zhang, Jie‐Yin
AU7 - Wang, Ting
AU8 - Yao, Yuan
AU9 - Wang, Gui‐Lei
AU1 - Kukučka, Josip
AU1 - Vukušić, Lada
AU1 - Kloeffel, Christoph
AU1 - Loss, Daniel
AU1 - Liu, Feng
AU1 - Katsaros, Georgios
AU1 - Zhang, Jian‐Jun
AB - Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site‐controlled nanowires is a prerequisite toward the next generation of devices that will require addressability and scalability. Here, combining top‐down nanofabrication and bottom‐up self‐assembly, the growth of Ge wires on prepatterned Si (001) substrates with controllable position, distance, length, and structure is reported. This is achieved by a novel growth process that uses a SiGe strain‐relaxation template and can be potentially generalized to other material combinations. Transport measurements show an electrically tunable spin–orbit coupling, with a spin–orbit length similar to that of III–V materials. Also, charge sensing between quantum dots in closely spaced wires is observed, which underlines their potential for the realization of advanced quantum devices. The reported results open a path toward scalable qubit devices using nanowires on silicon.
TI - Site‐Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling
JF - Advanced Materials
DO - 10.1002/adma.201906523
DA - 2020-04-01
UR - https://www.deepdyve.com/lp/wiley/site-controlled-uniform-ge-si-hut-wires-with-electrically-tunable-spin-01cX0uw2ii
SP - n/a
EP - n/a
VL - 32
IS - 16
DP - DeepDyve
ER -