TY - JOUR
AU - Wigginton, Stewart C.
AB - A unique method has been developed for interconnecting a GaAs semiconductor device to an Application Specific Integrated Circuit (ASIC) chip. The device has 400 control points on a 25 im pitch. A silicon interconnect chip with cantilevered gold beam leads having the same packing density as the GaAs device and ASIC chip was designed to " bridge" the space between the two. Special photolithographic steps had to be developed to fabricate beams 250 pm long X 9 tm thick. The methods for fabricating the bridge chip and its final assembly will be discussed.
TI - High-density chip-to-chip interconnect system for GaAs semiconductor devices
JF - Proceedings of SPIE
DO - 10.1117/12.25612
DA - 1991-04-01
UR - https://www.deepdyve.com/lp/spie/high-density-chip-to-chip-interconnect-system-for-gaas-semiconductor-00oQQo4egu
SP - 560
EP - 567
VL - 1390
IS - 1
DP - DeepDyve
ER -