%0 Journal Article
%T Electrical properties of Ge metal–oxide–semiconductor capacitors with high-k La2O3 gate dielectric incorporated by N or/and TiProject supported by the ...
%A Huoxi, Xu
%A Jingping, Xu
%J Journal of Semiconductors
%V 37
%N 6
%P 4
%@ 1674-4926
%D 2016-06-01
%~ DeepDyve