%0 Journal Article
%T On the Etching Mechanism of Highly Hydrogenated SiN Films by CF4/D2 Plasma: Comparison with CF4/H2
%A Hsiao, Shih-Nan
%A Nguyen, Thi-Thuy-Nga
%A Tsutsumi, Takayoshi
%A Ishikawa, Kenji
%A Sekine, Makoto
%A Hori, Masaru
%J Coatings
%V 11
%N 12
%@ 2079-6412
%D 2021-12-14
%I Multidisciplinary Digital Publishing Institute
%~ DeepDyve