%0 Journal Article
%T Very high frequency (∼100 MHz) plasma enhanced atomic layer deposition high-κ hafnium zirconium oxide capacitors near morphotropic phase boundary with low current density & high-κ for DRAM technology
%A Yang, Ketong
%A Shin, Hunbeom
%A Kim, Seungyeob
%A Jung, Taeseung
%A Jeon, Sanghun
%J Journal of Materials Chemistry C: Materials for optical and electronic devices
%V 13
%N 13
%P 6702-6707
%@ 2050-7526
%D 2025-02-11
%I The Royal Society of Chemistry
%~ DeepDyve